Monolithic Broadband InGaN Light-Emitting Diode

Monolithic Broadband InGaN Light-Emitting Diode by Cong Feng, Jian-An Huang, Hoi Wai Choi.

A monolithic nonphosphor broadband-emission light-emitting diode is demonstrated, comprising a combination of high-density microstructured and nanostructured InGaN-GaN quantum wells fabricated using top-down approach. Broadband emission achieved by taking advantage low-dimensional-induced strain-relaxation highly strained wells, combining light emitted from strain-relaxed nanotips at wavelengths shorter than the as-grown as much 80 nm with longer-wavelength larger nonrelaxed microdisks. The localized characteristics have been studied spatially resolved near-field photoluminescence spectroscopy which enabled both intensity spectrum individual to be distinguished larger-dimensioned regions. Distinctive blue-green-yellow can observed electroluminescent device, whose continuous broadband characterized CIE coordinates (0.39, 0.47) color rendering in…

Read Monolithic Broadband InGaN Light-Emitting Diode on